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tv america certificate number: u8v 12 05 54214 024 ul certified file no.: e316429 application 1. the acs758 outputs an analog signal, v out , that varies linearly with the uni- or bi-directional ac or dc primary sampled current, i p , within the range specified. c f is for optimal noise management, with values that depend on the application. acs758xcb description the allegro ? acs758 family of current sensor ics provides economical and precise solutions for ac or dc current sensing. typical applications include motor control, load detection and management, power supply and dc-to-dc converter control, inverter control, and overcurrent fault detection. the device consists of a precision, low-offset linear hall circuit with a copper conduction path located near the die. applied current flowing through this copper conduction path generates a magnetic field which the hall ic converts into a proportional voltage. device accuracy is optimized through the close proximity of the magnetic signal to the hall transducer. a precise, proportional output voltage is provided by the low-offset, chopper-stabilized bicmos hall ic, which is programmed for accuracy at the factory. high level immunity to current conductor dv/dt and stray electric fields, offered by allegro proprietary integrated shield technology, provides low output voltage ripple and low offset drift in high-side, high voltage applications. the output of the device has a positive slope (>v cc / 2) when an increasing current flows through the primary copper conduction path (from terminal 4 to terminal 5), which is the path used for current sampling. the internal resistance of this conductive path is 100 ? typical, providing low power loss. the thickness of the copper conductor allows survival of the device at high overcurrent conditions. the terminals of the acs758-ds, rev. 7 thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor continued on the next page? continued on the next page? typical application +3.3 or 5 v v out r f c f c byp 0.1 f ip+ ip? 2 gnd 4 5 acs758 3 1 viout vcc i p features and benefits ? industry-leading noise performance through proprietary amplifier and filter design techniques ? integrated shield greatly reduces capacitive coupling from current conductor to die due to high dv/dt signals, and prevents offset drift in high-side, high voltage applications ? total output error improvement through gain and offset trim over temperature ? small package size, with easy mounting capability ? monolithic hall ic for high reliability ? ultra-low power loss: 100 ? internal conductor resistance ? galvanic isolation allows use in economical, high-side current sensing in high voltage systems ? 3.0 to 5.5 v, single supply operation package: 5-pin package type tested pff leadform psf leadform pss leadform
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 2 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com selection guide part number 1 package primary sampled current , i p (a) sensitivity sens (typ.) (mv/a) current directionality t op (c) packing 2 terminals signal pins acs758lcb-050b-pff-t formed formed 50 40 . bidirectional ?40 to 150 34 pieces per tube acs758lcb-050u-pff-t formed formed 50 60 . unidirectional acs758lcb-100b-pff-t formed formed 100 20 . bidirectional acs758lcb-100b-psf-t straight formed 100 20 . bidirectional acs758lcb-100u-pff-t formed formed 100 40 . unidirectional ACS758KCB-150B-PFF-T formed formed 150 13.3 bidirectional ?40 to 125 acs758kcb-150b-pss-t straight straight 150 13.3 bidirectional acs758kcb-150u-pff-t formed formed 150 26.7 unidirectional acs758ecb-200b-pff-t formed formed 200 10 . bidirectional ?40 to 85 acs758ecb-200b-pss-t straight straight 200 10 . bidirectional acs758ecb-200u-pff-t formed formed 200 20 . unidirectional 1 additional leadform options available for qualified volumes. 2 contact allegro for additional packing options. conductive path are electrically isolated from the signal leads (pins 1 through 3). this allows the acs758 family of sensor ics to be used in applications requiring electrical isolation without the use of opto-isolators or other costly isolation techniques. the device is fully calibrated prior to shipment from the factory. the acs758 family is lead (pb) free. all leads are plated with 100% matte tin, and there is no pb inside the package. the heavy gauge leadframe is made of oxygen-free copper. description (continued) features and benefits (continued) ? 120 khz typical bandwidth ? 3 s output rise time in response to step input current ? output voltage proportional to ac or dc currents ? factory-trimmed for accuracy ? extremely stable output offset voltage ? nearly zero magnetic hysteresis
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 3 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com absolute maximum ratings characteristic symbol notes rating units forward supply voltage v cc 8v reverse supply voltage v rcc ?0.5 v forward output voltage v iout 28 v reverse output voltage v riout ?0.5 v output source current i out(source) viout to gnd 3 ma output sink current i out(sink) vcc to viout 1 ma nominal operating ambient temperature t op range e ?40 to 85 oc range k ?40 to 125 oc range l ?40 to 150 oc maximum junction t j (max) 165 oc storage temperature t stg ?65 to 165 oc isolation characteristics characteristic symbol notes rating unit dielectric strength test voltage* v iso agency type-tested for 60 seconds per ul standard 60950-1, 2nd edition 4800 vac working voltage for basic isolation v wfsi for basic (single) isolation per ul standard 60950-1, 2nd edition 990 vdc or v pk 700 v rms working voltage for reinforced isolation v wfri for reinforced (double) isolation per ul standard 60950-1, 2nd edition 636 vdc or v pk 450 v rms * allegro does not conduct 60-second testing. it is done only during the ul certification process.
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 4 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com typical overcurrent capabilities 1,2 characteristic symbol notes rating units overcurrent i poc t a = 25c, 1s duration, 1% duty cycle 1200 a t a = 85c, 1s duration, 1% duty cycle 900 a t a = 150c, 1s duration, 1% duty cycle 600 a 1 test was done with allegro evaluation board. the maximum allowed current is limited by t j (max) only. 2 for more overcurrent profiles, please see faq on the allegro website, www.allegromicro.com. thermal characteristics may require derating at maximum conditions characteristic symbol test conditions* value unit package thermal resistance r ja mounted on the allegro evaluation board with 2800 mm 2 (1400 mm 2 on component side and 1400 mm 2 on opposite side) of 4 oz. copper con- nected to the primary leadframe and with thermal vias connecting the copper layers. performance is based on current flowing through the primary leadframe and includes the power consumed by the pcb. 7 oc/w *additional thermal information available on the allegro website
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 5 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com ip+ ip? viout gnd vcc 4 5 3 2 1 terminal list table number name description 1 vcc device power supply terminal 2 gnd signal ground terminal 3 viout analog output signal 4 ip+ terminal for current being sampled 5 ip? terminal for current being sampled functional block diagram pin-out diagram amp out vcc +3.3 to 5 v viout gnd filter dynamic offset cancellation 0.1 f ip? ip+ gain temperature coefficient gain trim control offset temperature coefficient offset to all subcircuits
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 6 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com common operating characteristics 1 valid at t op = ?40c to 150c and v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units supply voltage 2 v cc 3 5.0 5.5 v supply current i cc output open ? 10 13.5 ma power-on delay t pod t a = 25c ? 10 ? s rise time 3 t r i p step = 60% of i p +, 10% to 90% rise time, t a = 25c, c out = 0.47 nf ?3? s propagation delay time 3 t prop t a = 25c, c out = 0.47 nf ? 1 ? s response time t response measured as sum of t prop and t r ?4? s internal bandwidth 4 bw i ?3 db; t a = 25c, c out = 0.47 nf ? 120 ? khz output load resistance r load(min) viout to gnd 4.7 ? ? k output load capacitance c load(max) viout to gnd ? ? 10 nf primary conductor resistance r primary t a = 25c ? 100 ? ? symmetry 3 e sym over half-scale of ip 99 100 101 % quiescent output voltage 5 v iout(qbi) bidirectional variant, i p = 0 a, t a = 25c ? v cc /2 ? v v iout(quni) unidirectional variant, i p = 0 a, t a = 25c, v iout(quni) is ratiometric to v cc ? 0.6 ? v ratiometry 3 v rat v cc = 4.5 to 5.5 v ? 100 ? % 1 device is factory-trimmed at 5 v, for optimal accuracy. 2 devices are programmed for maximum accuracy at 5.0 v v cc levels. the device contains ratiometry circuits that accurately alter the 0 a output volt- age and sensitivity level of the device in proportion to the applied v cc level. however, as a result of minor nonlinearities in the ratiometry circuit ad- ditional output error will result when v cc varies from the 5 v v cc level. customers that plan to operate the device from a 3.3 v regulated supply should contact their local allegro sales representative regarding expected device accuracy levels under these bias conditions. 3 see characteristic definitions section of this datasheet. 4 calculated using the formula bw i = 0.35 / t r . 5 v iout(q) may drift over the lifetime of the device by as much as 25 mv.
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 7 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com x 050b performance characteristics 1 : t op = ?40c to 150c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p ?50 ? 50 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 40 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 150c ? 39.4 ? mv/a sens (top)lt full scale of i p applied for 5 ms,t op = ?40c to 25c ? 41 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 10 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ?1 ? 1 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 150c ? 15 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 35 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 50 a ? 100 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 150c ? ?1.2 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 2 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 2.5 v. 4 percentage of i p . output filtered. x 050u performance characteristics 1 : t op = ?40c to 150c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p 0 ? 50 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 60 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 150c ? 59 ? mv/a sens (top)lt full scale of i p applied for 5 ms,t op = ?40c to 25c ? 61 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 15 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ?1 ? 1 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 150c ? 20 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 40 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 50 a ? 100 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 150c ? ?1.2 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 2 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 0.6 v. 4 percentage of i p . output filtered.
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 8 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com x 100b performance characteristics 1 : t op = ?40c to 150c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p ?100 ? 100 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 20 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 150c ? 19.75 ? mv/a sens (top)lt full scale of i p applied for 5 ms, t op = ?40c to 25c ? 20.5 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 6 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ?1.25 ? 1.25 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 150c ? 20 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 20 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 100 a ? 150 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 150c ? ?1.3 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 2.4 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 2.5 v. 4 percentage of i p . output filtered. x 100u performance characteristics 1 : t op = ?40c to 150c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p 0 ? 100 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 40 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 150c ? 39.5 ? mv/a sens (top)lt full scale of i p applied for 5 ms, t op = ?40c to 25c ? 41 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 12 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ?1.25 ? 1.25 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 150c ? 20 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 20 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 100 a ? 150 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 150c ? ?1.3 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 2.4 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 0.6 v. 4 percentage of i p . output filtered.
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 9 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com x 150b performance characteristics 1 : t op = ?40c to 125c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p ?150 ? 150 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 13.3 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 125c ? 13.1 ? mv/a sens (top)lt full scale of i p applied for 5 ms, t op = ?40c to 25c ? 13.5 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 4 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ? 1 ? 1 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 125c ? 14 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 24 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 150 a ? 205 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 125c ? ?1.8 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 1.6 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 2.5 v. 4 percentage of i p . output filtered. x 150u performance characteristics 1 : t op = ?40c to 125c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p 0 ? 150 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 26.6 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 125c ? 26.6 ? mv/a sens (top)lt full scale of i p applied for 5 ms, t op = ?40c to 25c ? 27.4 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 8 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ? 1 ? 1 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 125c ? 14 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 24 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 150 a ? 205 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 125c ? ?1.8 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 1.6 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 0.6 v. 4 percentage of i p . output filtered.
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 10 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com x 200b performance characteristics 1 : t op = ?40c to 85c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p ?200 ? 200 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 10 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 85c ? 9.88 ? mv/a sens (top)lt full scale of i p applied for 5 ms, t op = ?40c to 25c ? 10.13 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 3 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ? 1 ? 1 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 85c ? 15 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 25 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 200 a ? 230 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 85c ? ?1.2 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 1.2 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 2.5 v . 4 percentage of i p . output filtered. x 200u performance characteristics 1 : t op = ?40c to 85c, v cc = 5 v, unless otherwise specified characteristic symbol test conditions min. typ. max. units primary sampled current i p 0 ? 200 a sensitivity sens ta full scale of i p applied for 5 ms, t a = 25c ? 20 ? mv/a sens (top)ht full scale of i p applied for 5 ms, t op = 25c to 85c ? 19.7 ? mv/a sens (top)lt full scale of i p applied for 5 ms, t op = ?40c to 25c ? 20.3 ? mv/a noise 2 v noise t a = 25c, 10 nf on viout pin to gnd ? 6 ? mv nonlinearity e lin up to full scale of i p , i p applied for 5 ms ? 1 ? 1 % electrical offset voltage 3 v oe(ta) i p = 0 a, t a = 25c ? 5 ? mv v oe(top)ht i p = 0 a, t op = 25c to 85c ? 20 ? mv v oe(top)lt i p = 0 a, t op = ?40c to 25c ? 35 ? mv magnetic offset error i errom i p = 0 a, t a = 25c, after excursion of 200 a ? 230 ? ma total output error 4 e tot(ht) over full scale of i p , i p applied for 5 ms, t op = 25c to 85c ? ?1.2 ? % e tot(lt) over full scale of i p , i p applied for 5 ms, t op = ?40c to 25c ? 1.2 ? % 1 see characteristic performance data page for parameter distributions over temperature range. 2 3 sigma noise voltage. 3 v oe(top) drift is referred to ideal v iout(q) = 0.6 v . 4 percentage of i p . output filtered.
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 11 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com characteristic performance data data taken using the acs758lcb-50b accuracy data mean typical maximum limit typical minimum limit 30 20 10 0 -10 -20 -30 -40 -50 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 42.0 42.5 41.0 40.5 40.0 39.5 39.0 38.5 100.40 100.35 100.30 100.25 100.20 100.15 100.10 100.05 100.00 99.95 6 5 4 3 2 1 0 -1 -2 -3 -4 v oe (mv) e lin (%) sens (mv/a) e sym (%) e tot (%) t a (c) t a (c) t a (c) t a (c) t a (c) 140 120 100 80 60 40 20 0 i errom (ma) t a (c) electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature symmetry versus ambient temperature
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 12 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com characteristic performance data data taken using the acs758lcb-100b accuracy data mean typical maximum limit typical minimum limit 25 20 15 10 5 0 -5 -10 -15 -20 -25 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 21.2 21.0 20.8 20.6 20.4 20.2 20.0 19.8 19.6 19.4 19.2 100.6 100.5 100.4 100.3 100.2 100.1 100.0 99.9 99.8 99.7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 v oe (mv) e lin (%) sens (mv/a) e sym (%) e tot (%) t a (c) t a (c) t a (c) t a (c) t a (c) 200 190 180 170 160 150 130 120 110 100 i errom (ma) t a (c) ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 ?50 100 125 150 50 0 -25 25 75 electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature symmetry versus ambient temperature
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 13 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com characteristic performance data data taken using the acs758kcb-150b accuracy data mean typical maximum limit typical minimum limit 20 15 10 5 0 -5 -10 -15 -20 -25 -30 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 0.30 0.25 02.0 0.15 0.10 0.05 0 14.0 13.8 13.6 13.4 13.2 13.0 12.8 12.6 100.7 100.6 100.5 100.4 100.3 100.2 100.1 100.0 99.9 99.8 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 v oe (mv) e lin (%) sens (mv/a) e sym (%) e tot (%) t a (c) t a (c) t a (c) t a (c) t a (c) ?60 60 100 120 140 80 ?40 40 ?20 20 0 300 250 200 150 100 50 0 i errom (ma) t a (c) electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature symmetry versus ambient temperature
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 14 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com characteristic performance data data taken using the acs758ecb-200b accuracy data mean typical maximum limit typical minimum limit 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 ?60 60 100 120 140 80 ?40 40 ?20 20 0 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 10.4 10.3 10.2 10.1 10.0 9.9 9.8 9.7 9.6 9.5 100.8 100.6 100.4 100.2 100.0 99.8 99.6 4 3 2 1 0 -1 -2 -3 -4 -5 -6 v oe (mv) e lin (%) sens (mv/a) e sym (%) e tot (%) t a (c) t a (c) t a (c) t a (c) t a (c) ?60 60 100 120 140 80 ?40 40 ?20 20 0 350 300 250 200 150 100 50 0 i errom (ma) t a (c) electrical offset voltage versus ambient temperature nonlinearity versus ambient temperature sensitivity versus ambient temperature total output error versus ambient temperature magnetic offset error versus ambient temperature symmetry versus ambient temperature
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 15 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com characteristic performance data data taken using the acs758lcb-100 timing data i p (20 a/div.) 2.988 s v iout (0.5 v/div.) t (2 s/div.) i p (20 a/div.) v iout (0.5 v/div.) t (2 s/div.) v cc v iout (1 v/div.) (i p = 60 a dc) t (2 s/div.) i p (20 a/div.) v iout (0.5 v/div.) t (2 s/div.) 3.960 s 9.034 s 997 ns response time propagation delay time power-on delay rise time
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 16 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com sensitivity (sens). the change in device output in response to a 1 a change through the primary conductor. the sensitivity is the product of the magnetic circuit sensitivity (g / a) and the linear ic amplifier gain (mv/g). the linear ic amplifier gain is pro- grammed at the factory to optimize the sensitivity (mv/a) for the half-scale current of the device. noise (v noise ). the noise floor is derived from the thermal and shot noise observed in hall elements. dividing the noise (mv) by the sensitivity (mv/a) provides the smallest current that the device is able to resolve. nonlinearity (e lin ). the degree to which the voltage output from the ic varies in direct proportion to the primary current through its half-scale amplitude. nonlinearity in the output can be attributed to the saturation of the flux concentrator approaching the half-scale current. the following equation is used to derive the linearity: 100 1? [ { [ { v iout _half-scale amperes ? v iout(q) gain % sat ( ) 2 ( v iout _quarter-scale amperes ? v iout(q) ) where ? gain = the gain variation as a function of temperature changes from 25oc, % sat = the percentage of saturation of the flux concentra- tor, which becomes significant as the current being sampled approaches half-scale i p , and v iout_half-scale amperes = the output voltage (v) when the sampled current approximates half-scale i p . symmetry (e sym ). the degree to which the absolute voltage output from the ic varies in proportion to either a positive or negative half-scale primary current. the following equation is used to derive symmetry: 100 v iout _+ half-scale amperes ? v iout(q) v iout(q) ? v iout _?half-scale amperes ?? ratiometry. the device features a ratiometric output. this means that the quiescent voltage output, v ioutq , and the mag- netic sensitivity, sens, are proportional to the supply voltage, v cc . the ratiometric change (%) in the quiescent voltage output is defined as: v cc 5 v v ioutq(v cc ) v ioutq(5v) $ v ioutq( $ v) = s % and the ratiometric change (%) in sensitivity is defined as: v cc 5 v = s % $ sens ( $ v sens (v cc sens ( v quiescent output voltage (v iout(q) ). quiescent output voltage (v iout(q) ). the output of the device when the primary current is zero. for bidirectional devices, it nominally remains at v cc 2. thus, v cc = 5 v translates into v iout(qbi) = 2.5 v. for unidirec- tional devices, it nominally remains at 0.12 v cc . thus, v cc = 5 v translates into v iout(quni) = 0.6 v. variation in v iout(q) can be attributed to the resolution of the allegro linear ic quies- cent voltage trim, magnetic hysteresis, and thermal drift. electrical offset voltage (v oe ). the deviation of the device out- put from its ideal quiescent value of v cc 2 for bidirectional and 0.1 v cc for unidirectional devices, due to nonmagnetic causes. magnetic offset error (i errom ). the magnetic offset is due to the residual magnetism (remnant field) of the core material. the magnetic offset error is highest when the magnetic circuit has been saturated, usually when the device has been subjected to a full-scale or high-current overload condition. the magnetic offset is largely dependent on the material used as a flux concentrator. the larger magnetic offsets are observed at the lower operating temperatures. total output error (e tot ). the maximum deviation of the actual output from its ideal value, also referred to as accuracy , illustrated graphically in the output voltage versus current chart on the following page. e tot is divided into four areas: ?? 0 a at 25c. accuracy at the zero current flow at 25c, with- out the effects of temperature. ?? 0 a over temperature. accuracy at the zero current flow including temperature effects. ?? half-scale current at 25c. accuracy at the the half-scale current at 25c, without the effects of temperature. ?? half-scale current over temperature. accuracy at the half- scale current flow including temperature effects. definitions of accuracy characteristics characteristic definitions
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 17 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com output voltage versus sampled current total output error at 0 a and at half-scale current increasing v iout (v) +i p (a) accuracy accuracy accuracy 25c only accuracy 25c only accuracy 25c only accuracy 0 a vr oe $ temp erature average v iout ?i p (a) vr oe $ temp erature vr oe $ temp erature decreasing v iout (v) i p (min) i p (max) half scale definitions of dynamic response characteristics propagation delay (t prop ). the time required for the device output to reflect a change in the primary current signal. propaga- tion delay is attributed to inductive loading within the linear ic package, as well as in the inductive loop formed by the primary conductor geometry. propagation delay can be considered as a fixed time offset and may be compensated. primary current transducer output 90 0 i (%) propagation time, t prop t primary current transducer output 90 10 0 i (%) rise time, t r t rise time (t r ). the time interval between a) when the device reaches 10% of its full scale value, and b) when it reaches 90% of its full scale value. the rise time to a step response is used to derive the bandwidth of the device, in which ?(?3 db) = 0.35 / t r . both t r and t response are detrimentally affected by eddy current losses observed in the conductive ic ground plane. power-on time (t po ). when the supply is ramped to its operat- ing voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. power-on time, t po , is defined as the time it takes for the output voltage to settle within 10% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage, v cc (min), as shown in the chart at right. bidirectional unidirectional increasing v iout (v) +i p (a) accuracy accuracy 25c only accuracy 25c only accuracy 0 a vr oe $ temp erature average v iout ?i p (a) vr oe $ temp erature decreasing v iout (v) i p(max) full scale
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 18 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com chopper stabilization is an innovative circuit technique that is used to minimize the offset voltage of a hall element and an asso- ciated on-chip amplifier. allegro patented a chopper stabiliza- tion technique that nearly eliminates hall ic output drift induced by temperature or package stress effects. this offset reduction technique is based on a signal modulation- demodulation process. modulation is used to separate the unde- sired dc offset signal from the magnetically induced signal in the frequency domain. then, using a low-pass filter, the modulated dc offset is suppressed while the magnetically induced signal passes through the filter. the anti-aliasing filter prevents aliasing from happening in applications with high frequency signal com- ponents which are beyond the user?s frequency range of interest. as a result of this chopper stabilization approach, the output voltage from the hall ic is desensitized to the effects of tempera- ture and mechanical stress. this technique produces devices that have an extremely stable electrical offset voltage, are immune to thermal stress, and have precise recoverability after temperature cycling. this technique is made possible through the use of a bicmos process that allows the use of low-offset and low-noise amplifiers in combination with high-density logic integration and sample and hold circuits. chopper stabilization technique amp regulator clock/logic hall element sample and hold anti-aliasing filter low-pass filter concept of chopper stabilization technique
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 19 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com package cb, 5-pin package, leadform pff creepage distance, current terminals to signal pins: 7.25 mm clearance distance, current terminals to signal pins: 7.25 mm package mass: 4.63 g typical 4 r1 1.91 3 21.4 0.5 r3 ? 0.8 ? 1.5 ? 0.5 r2 perimeter through-holes recommended 1o2 5o5 b 23 14.00.2 17.50.2 4.00.2 3.00.2 2.90.2 3.50.2 3.50.2 10.000.10 13.000.10 0.510.10 4.400.10 7.000.10 1.90.2 1.500.10 1 4 5 a a c b c b branding scale and appearance at supplier discretion dambar removal intrusion for reference only; not for tooling use (reference dwg-9111, dwg-9110) dimensions in millimeters dimensions exclusive of mold flash, gate burrs, and dambar protrusions exact case and lead configuration at supplier discretion within limits shown standard branding reference view n = device part number t = temperature code a = amperage range l = lot number y = last two digits of year of manufacture w = week of manufacture = supplier emblem branded face 0.381 +0.060 ?0.030 1 nnnnnnn ttt - aaa lllllll yyww pcb layout reference view
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 20 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com package cb, 5-pin package, leadform psf 5o5 23 23.500.5 1 4 5 a 2.750.10 1.500.10 14.00.2 4.00.2 3.00.2 2.90.2 3.50.2 13.000.10 4.400.10 10.000.10 0.510.10 7.000.10 1.90.2 a b b 1.91 .075 ? 0.8 .031 ? 1.5 .059 recommended pcb layout view 0.381 +0.060 ?0.030 1 nnnnnnn ttt - aaa lllllll yyww branding scale and appearance at supplier discretion dambar removal intrusion for reference only; not for tooling use (reference dwg-9111, dwg-9110) dimensions in millimeters dimensions exclusive of mold flash, gate burrs, and dambar protrusions exact case and lead configuration at supplier discretion within limits shown standard branding reference view branded face n = device part number t = temperature code a = amperage range l = lot number y = last two digits of year of manufacture w = week of manufacture = supplier emblem
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 21 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com 23 1 4 5 a 2.750.10 3.180.10 1.500.10 14.00.2 4.00.2 3.00.2 10.000.10 0.510.10 7.000.10 1.90.2 13.000.10 4.400.10 11.00.05 23.500.5 a b b 0.381 +0.060 ?0.030 1 nnnnnnn ttt - aaa lllllll yyww branding scale and appearance at supplier discretion dambar removal intrusion for reference only; not for tooling use (reference dwg-9111, dwg-9110) dimensions in millimeters dimensions exclusive of mold flash, gate burrs, and dambar protrusions exact case and lead configuration at supplier discretion within limits shown standard branding reference view branded face n = device part number t = temperature code a = amperage range l = lot number y = last two digits of year of manufacture w = week of manufacture = supplier emblem package cb, 5-pin package, leadform pss creepage distance, current terminals to signal pins: 7.25 mm clearance distance, current terminals to signal pins: 7.25 mm package mass: 4.63 g typical
thermally enhanced, fully integrated, hall effect-based linear current sensor ic with 100 current conductor acs758xcb 22 allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com revision history revision revision date description of revision rev. 7 april 9, 2013 update isolation certifications and specifications, update to current terminology and patents, update product selection copyright ?2008-2013, allegro microsystems, llc the products described herein are protected by u.s. patents: 6,781,359, 7,265,531, and 8,080,994. allegro microsystems, llc reserves the right to make, from time to time, such de par tures from the detail spec i fi ca tions a s may be required to permit improvements in the per for mance, reliability, or manufacturability of its products. before placing an order, the user is cautioned to verify that the information being relied upon is current. allegro?s products are not to be used in life support devices or systems, if a failure of an allegro product can reasonably be expected to cause the failure of that life support device or system, or to affect the safety or effectiveness of that device or system. the in for ma tion in clud ed herein is believed to be ac cu rate and reliable. how ev er, allegro microsystems, llc assumes n o re spon si bil i ty for its use; nor for any in fringe ment of patents or other rights of third parties which may result from its use. for the latest version of this document, visit our website: www.allegromicro.com

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